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PEOPLE@HES-SO - Verzeichnis der Mitarbeitenden und Kompetenzen
PEOPLE@HES-SO - Verzeichnis der Mitarbeitenden und Kompetenzen

PEOPLE@HES-SO
Verzeichnis der Mitarbeitenden und Kompetenzen

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Löffler Janina

Löffler Janina

Professeur-e HES Assistant-e

Hauptkompetenzen

Photovoltaic

Photonics

Smart Agriculture

Applied Physics

Finite element modeling

Thin Films and Surface Treatment

Light detection

  • Kontakt

  • Lehre

  • Publikationen

Hauptvertrag

Professeur-e HES Assistant-e

Büro: ENP.23.N401

HES-SO Valais-Wallis - Haute Ecole d'Ingénierie
Rue de l'Industrie 23, 1950 Sion, CH
HEI - VS
Bereich
Technique et IT
Hauptstudiengang
Energie et techniques environnementales
BSc HES-SO en Ingénierie des sciences du vivant - HES-SO Valais-Wallis - Haute Ecole d'Ingénierie
  • Physik
BSc HES-SO en Systèmes industriels - HES-SO Valais-Wallis - Haute Ecole d'Ingénierie
  • Physik

2022

A comprehensive analysis of electron emission from a-Si:H/Al2O3 at low energies
Wissenschaftlicher Artikel ArODES

Janina Löffler, Mohamed Belhaj, Nenad Bundaleski, Juan J. Diaz Leon, Jonathan Thomet, Samira Frey, Christophe Ballif, Nicolas Wyrsch

Journal of Physics D: Applied Physics,  2023, 56, 6, 065306

Link zur Publikation

Zusammenfassung:

Recently developed microchannel plates based on amorphous silicon offer potential advantages with respect to glass based ones. In this context, secondary electron emission at very low energies below 100 eV has been studied for relevant materials for these novel devices. The aim of this work was to quantify the low energy electron emission - secondary emission and elastic scattering - from amorphous silicon and alumina and the dependence of the emission energy distribution on the primary electron energy, which was previously unknown. Secondary emission and energy distribution were both modelled and measured using equipment particularly designed for this energy range. The effects of roughness, angle of incidence and surface composition were analysed. We show crossover energies as well as the angular dependence of electron emission from amorphous silicon and alumina, with a maximum experimental emission yield value of 2 and 2.8, respectively, at an incident angle of 75°. A parameterization for the energy dependence of the emission energy spectrum at low energies was derived. This extensive analysis is fundamental for a comprehensive understanding of the performance of amorphous silicon-based microchannel plate detectors. It provides a complete model for secondary electron emission for a detailed description of the detector operation. The present results thus set the basis for a simulation framework, which is an essential element to increase the performance of these detectors and enable further developments.

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